NVD5807NT4G
MOSFET N-CH 40V 23A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5807NT4G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 23A at 25°C (Tc), with a maximum power dissipation of 33W (Tc). The device exhibits a low on-resistance of 31mOhm at 5A and 10V VGS. Key parameters include a gate charge (Qg) of 20nC at 10V and input capacitance (Ciss) of 603pF at 25V. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. The NVD5807NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. This MOSFET is qualified to AEC-Q101 standards, making it appropriate for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 603 pF @ 25 V |
| Qualification | AEC-Q101 |
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