NVD5806NT4G
MOSFET N-CH 40V 33A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5806NT4G is a N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 33A at 25°C, with a maximum power dissipation of 40W (Tc). Optimized for efficient switching, it exhibits a maximum Rds(on) of 19mOhm at 15A and 10V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact designs. Key electrical parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 860 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
| Qualification | AEC-Q101 |