NVD5805NT4G
MOSFET N-CH 40V 51A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5805NT4G is an N-Channel MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 51A at 25°C. The low on-resistance is specified at 9.5mOhm maximum at 15A and 10V gate-source voltage (Vgs). It offers a maximum power dissipation of 47W at the case temperature and a junction-to-case thermal resistance that supports efficient thermal management. The NVD5805NT4G is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 1725 pF at 25V. This device operates across a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
| Qualification | AEC-Q101 |