NVD5803NT4G
MOSFET N-CH 40V 85A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5803NT4G is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) rating of 85 A at 25°C. The low on-resistance (Rds On) of 5.7 mOhm at 50 A and 10 V gate drive minimizes conduction losses. The device offers a maximum power dissipation of 83 W (Tc) and a gate charge (Qg) of 51 nC at 10 V. With a junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The NVD5803NT4G is qualified to AEC-Q101 and manufactured using MOSFET technology. It is supplied in a TO-252-3, DPAK package, ideal for surface mounting, and is provided on tape and reel. This component is frequently utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
| Qualification | AEC-Q101 |
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