NVD5802NT4G-VF01
MOSFET N-CH 40V 16.4A/101A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5802NT4G-VF01 is a 40V N-Channel MOSFET designed for demanding automotive applications. This device features a low Rds(on) of 4.4mOhm at 50A and 10V, enabling efficient power handling. Continuous drain current is rated at 16.4A at 25°C ambient and 101A at 25°C case temperature. Power dissipation is 2.5W (ambient) and 93.75W (case). The NVD5802NT4G-VF01 is supplied in a TO-252-3 DPAK surface mount package, facilitating high-density board layouts. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 5300 pF at 12V. Qualified to AEC-Q101 automotive standards, this MOSFET is suitable for power switching and motor control circuits in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 101A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 93.75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 12 V |
| Qualification | AEC-Q101 |
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