NVD5802NT4G-TB01
MOSFET N-CH 40V 16.4A/101A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, NVD5802NT4G-TB01, is designed for demanding applications. This AEC-Q101 qualified device features a 40V drain-source breakdown voltage and offers a continuous drain current of 16.4A at 25°C ambient and 101A at 25°C case temperature. The low on-resistance of 4.4mOhm is achieved at 50A drain current and 10V gate-source voltage. It supports a wide operating temperature range from -55°C to 175°C. With a maximum power dissipation of 2.5W (ambient) and 93.75W (case), this MOSFET is suitable for automotive and industrial power management systems. Key electrical parameters include a typical input capacitance (Ciss) of 5300pF at 12V and a gate charge (Qg) of 100nC at 10V. The device is provided in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 101A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 93.75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 12 V |
| Qualification | AEC-Q101 |
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