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NVD5802NT4G

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NVD5802NT4G

MOSFET N-CH 40V 16.4A/101A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVD5802NT4G, is engineered for demanding automotive applications. This AEC-Q101 qualified device features a 40V drain-source breakdown voltage and offers continuous drain current capabilities of 16.4A at 25°C ambient and 101A at 25°C case temperature. The NVD5802NT4G is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 2.5W (Ta) or 93.75W (Tc). Key electrical characteristics include a low 4.4mOhm maximum on-resistance at 50A and 10V gate-source voltage. Drive voltage flexibility is provided with a range from 5V to 10V, and a maximum gate-source voltage of ±20V. The device exhibits a maximum input capacitance (Ciss) of 5300pF at 12V and a gate charge (Qg) of 100nC at 10V, operating within an extended temperature range of -55°C to 175°C. This component is suitable for power switching and load management in automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 12 V
QualificationAEC-Q101

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