NVD5490NLT4G-VF01
MOSFET N-CH 60V 5A/17A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5490NLT4G-VF01 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 5A at ambient temperature (Ta) and 17A at case temperature (Tc). The device boasts a low Rds On of 64mOhm maximum at 9A and 10V Vgs, with a gate charge (Qg) of 14 nC maximum. Power dissipation is rated at 3.4W (Ta) and 49W (Tc). Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Qualified to AEC-Q101 standards and suitable for automotive applications, the NVD5490NLT4G-VF01 utilizes advanced MOSFET technology.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 49W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
| Qualification | AEC-Q101 |
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