NVD5490NLT4G
MOSFET N-CH 60V 5A/17A DPAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5490NLT4G is an N-Channel MOSFET designed for robust performance in demanding applications. Featuring a Drain-Source Voltage (Vdss) of 60V, this component offers a continuous Drain Current (Id) of 5A at ambient temperature (Ta) and 17A at case temperature (Tc). Its low on-resistance (Rds On) of 64mOhm at 9A and 10V gate drive, coupled with a maximum gate charge (Qg) of 14 nC at 10V, ensures efficient power switching.
This AEC-Q101 qualified device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (DPAK-3) for surface mounting, and is supplied on a Tape & Reel (TR). With a maximum power dissipation of 3.4W (Ta) and 49W (Tc), the NVD5490NLT4G is suitable for automotive applications. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 49W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
| Qualification | AEC-Q101 |
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