NVD5484NLT4G-VF01
MOSFET N-CH 60V 10.7A/54A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5484NLT4G-VF01 is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 10.7A at 25°C ambient and 54A at 25°C case temperature. With a low on-resistance of 17mOhm maximum at 25A and 10V gate drive, it minimizes conduction losses. The MOSFET offers a power dissipation of 3.9W (Ta) and 100W (Tc). It is packaged in a TO-252-3, DPAK surface mount configuration, suitable for automated assembly. Key characteristics include a maximum gate charge of 48 nC at 10V and input capacitance of 1410 pF at 25V. The NVD5484NLT4G-VF01 meets AEC-Q101 qualification standards and operates within a temperature range of -55°C to 175°C. This component is utilized in power management solutions and motor control systems within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 25 V |
| Qualification | AEC-Q101 |
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