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NVD5414NT4G-VF01

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NVD5414NT4G-VF01

MOSFET N-CH 60V 24A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVD5414NT4G-VF01 is a 60V N-Channel Power MOSFET in a DPAK-3 package, designed for robust performance in demanding applications. This component offers a continuous drain current (Id) of 24A at 25°C (Tc) and a maximum power dissipation of 55W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 37mOhm at 24A and 10V, and a gate charge (Qg) of 48nC at 10V. Engineered for automotive environments, this MOSFET is AEC-Q101 qualified. Its operating temperature range spans from -55°C to 175°C (TJ), ensuring reliability across a wide spectrum of thermal conditions. The NVD5414NT4G-VF01 is suitable for power management, motor control, and other high-current switching applications within the automotive industry. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs37mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)55W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
QualificationAEC-Q101

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