NVD5413NT4G
MOSFET N-CH 60V 30A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number NVD5413NT4G, is a 60V device designed for high-efficiency power switching applications. This automotive-grade component, qualified to AEC-Q101 standards, features a continuous drain current capability of 30A (Tc) and a maximum power dissipation of 68W (Tc). With a low on-resistance of 26mOhm at 20A and 10V, and a gate charge of 46nC at 10V, it offers optimal performance in demanding environments. The NVD5413NT4G utilizes MOSFET technology and is packaged in a surface-mount DPAK (TO-252-3, DPAK) for efficient thermal management. It finds application in automotive power systems and general power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
| Qualification | AEC-Q101 |