NVD5407NT4G
MOSFET N-CH 40V 7.6A/38A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5407NT4G is a high-performance N-Channel Power MOSFET designed for demanding automotive applications. This device features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 7.6A at a 25°C ambient temperature, scaling to 38A when referenced to case temperature. With a low on-resistance of 26mOhm maximum at 20A and 10V Vgs, and a maximum power dissipation of 2.9W (Ta) or 75W (Tc), it excels in power efficiency. The NVD5407NT4G is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, suitable for automated assembly. Key specifications include a gate charge of 20 nC typical at 10V Vgs and input capacitance of 1000 pF maximum. This component meets AEC-Q101 qualification standards and operates reliably across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 32 V |
| Qualification | AEC-Q101 |
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