NVD5117PLT4G-VF01
MOSFET P-CH 60V 11A/61A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVD5117PLT4G-VF01 is a P-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and offers a continuous drain current of 11A at a typical ambient temperature (Ta) and 61A at a case temperature (Tc). The device boasts a low on-resistance (Rds On) of 16mOhm maximum at 29A and 10V Vgs. With a maximum power dissipation of 4.1W (Ta) and 118W (Tc), it is suitable for high-power switching. Key parameters include a gate charge (Qg) of 85nC at 10V and input capacitance (Ciss) of 4800pF at 25V. The NVD5117PLT4G-VF01 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 and is offered in Tape & Reel (TR) packaging. This AEC-Q101 qualified component is commonly utilized in automotive, industrial, and power management systems requiring robust performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
| Qualification | AEC-Q101 |
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