NVD5117PLT4G
MOSFET P-CH 60V 11A/61A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5117PLT4G is a P-Channel Power MOSFET designed for demanding applications. This device offers a 60V drain-to-source voltage (Vdss) and supports continuous drain current of 11A at ambient temperature (Ta) and 61A at case temperature (Tc). Its low on-resistance of 16mOhm at 29A and 10V (Vgs) minimizes conduction losses. The MOSFET features a maximum power dissipation of 4.1W (Ta) and 118W (Tc). With a gate charge (Qg) of 85 nC at 10V, it ensures efficient switching characteristics. The NVD5117PLT4G is housed in a TO-252-3, DPAK surface-mount package and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
| Qualification | AEC-Q101 |
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