NVD4856NT4G-VF01
MOSFET N-CH 25V 13.3A/89A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD4856NT4G-VF01 is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 25V Drain-Source Voltage (Vdss) and offers a continuous drain current capability of 13.3A at 25°C ambient and 89A at 25°C case temperature. With a low on-resistance of 4.7mOhm at 30A and 10V, it minimizes conduction losses, supported by efficient switching characteristics indicated by a typical Gate Charge (Qg) of 38 nC. The device is qualified to AEC-Q101 standards and operates across a wide temperature range of -55°C to 175°C. Supplied in a DPAK-3 surface mount package, it is suitable for high-power density designs in automotive power management systems, electronic control units, and advanced driver-assistance systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.33W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2241 pF @ 12 V |
| Qualification | AEC-Q101 |
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