NVD4810NT4G-VF01
MOSFET N-CH 30V 9A/54A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD4810NT4G-VF01 is an N-Channel MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 9A at ambient temperature and 54A at case temperature. Its low on-resistance (Rds On) of 10mOhm at 30A and 10V gate-source voltage (Vgs) makes it suitable for power switching. The device has a gate charge (Qg) of 21 nC at 11.5 V and an input capacitance (Ciss) of 1350 pF at 12 V. With a maximum power dissipation of 1.4W (Ta) and 50W (Tc), it operates across a wide temperature range from -55°C to 175°C. The NVD4810NT4G-VF01 utilizes MOSFET technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, supplied in Tape & Reel (TR). This component is qualified to AEC-Q101 standards, indicating its suitability for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12 V |
| Qualification | AEC-Q101 |
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