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NVD4810NT4G-TB01

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NVD4810NT4G-TB01

MOSFET N-CH 30V 9A/54A DPAK-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVD4810NT4G-TB01 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 9A at ambient temperature and 54A at case temperature. The Rds On is a maximum of 10mOhm at 30A and 10V, with a gate drive range from 4.5V to 10V. The NVD4810NT4G-TB01 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. It boasts a maximum power dissipation of 1.4W (Ta) and 50W (Tc), with an operating junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 21 nC @ 11.5 V and input capacitance (Ciss) of 1350 pF @ 12 V. This device is AEC-Q101 qualified and carries an Automotive grade, making it suitable for automotive power management systems and other high-reliability electronic designs. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 12 V
QualificationAEC-Q101

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