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NVD4810NT4G

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NVD4810NT4G

MOSFET N-CH 30V 9A/54A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVD4810NT4G, an N-Channel MOSFET, offers robust performance for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 9A at ambient temperature and 54A at case temperature. With a low on-resistance of 10mOhm at 30A and 10V, and a maximum power dissipation of 1.4W (Ta) or 50W (Tc), it is suitable for power management tasks. The device supports gate drive voltages from 4.5V to 11.5V and exhibits a maximum gate charge of 11 nC at 4.5V. Its input capacitance (Ciss) is rated at 1350 pF at 12V. Packaged in a TO-252-3, DPAK (SC-63) surface mount configuration and supplied on a Tape & Reel, this AEC-Q101 qualified component is designed for automotive applications. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 12 V
QualificationAEC-Q101

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