NVD4809NT4G
MOSFET N-CH 30V 9.6A/58A DPAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD4809NT4G is an N-Channel Power MOSFET designed for demanding automotive applications. This component offers a 30V drain-source breakdown voltage and supports continuous drain current of 9.6A at ambient temperature (Ta) and 58A at case temperature (Tc). The device features a low on-resistance of 9mOhm at 30A and 10V, optimized for efficient power switching. With a gate charge (Qg) of 25 nC at 11.5V, it facilitates fast switching speeds. The NVD4809NT4G is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. Maximum power dissipation is rated at 1.4W (Ta) and 52W (Tc). This MOSFET meets AEC-Q101 qualification standards, ensuring reliability in automotive environments. Typical applications include power management and motor control within the automotive sector.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1456 pF @ 12 V |
| Qualification | AEC-Q101 |
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