NVD4806NT4G
MOSFET N-CH 30V 76A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD4806NT4G is an N-Channel Power MOSFET designed for high-performance applications. Featuring a 30V drain-source breakdown voltage and a low on-resistance of 6mOhm at 30A and 10V, this device offers efficient power switching. The NVD4806NT4G supports a continuous drain current of 11.3A at ambient temperature and up to 79A at case temperature, with a maximum power dissipation of 1.4W (Ta) and 68W (Tc).
Key electrical characteristics include a gate charge of 23 nC at 4.5V and an input capacitance of 2142 pF at 12V. This MOSFET operates across a wide temperature range of -55°C to 175°C and is qualified to AEC-Q101 standards, making it suitable for automotive applications. The device is supplied in a DPAK (TO-252-3) surface mount package, provided on tape and reel. The NVD4806NT4G is utilized in power management, automotive systems, and power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
| Qualification | AEC-Q101 |
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