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NVD4805NT4G

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NVD4805NT4G

MOSFET N-CH 30V 12.7A/95A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVD4805NT4G, offers exceptional performance for demanding applications. This component features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 12.7A at ambient temperature (Ta) and 95A at case temperature (Tc). With a low on-resistance (Rds On) of 5mOhm at 30A and 10V, and a maximum gate charge (Qg) of 48 nC at 11.5V, it ensures efficient power switching. Designed for surface mounting in a TO-252-3, DPAK package, it dissipates a maximum of 1.41W (Ta) or 79W (Tc). This AEC-Q101 qualified component is suitable for automotive applications, providing reliable operation across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds2865 pF @ 12 V
QualificationAEC-Q101

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