NVD3055L170T4G-VF01
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD3055L170T4G-VF01 is an N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage and a continuous drain current capability of 9A at 25°C. With a maximum on-resistance of 170mOhm at 4.5A and 5V gate drive, it offers efficient power switching. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications, and operates across a temperature range of -55°C to 175°C. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, it supports surface mount installation. The power dissipation is rated at 28.5W (Ta).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 28.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
| Qualification | AEC-Q101 |
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