NVD3055-150T4G
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVD3055-150T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 9A at 25°C (Ta), with a maximum power dissipation of 28.8W (Ta). The Rds On is specified at a maximum of 150mOhm at 4.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 15 nC at 10V and an Input Capacitance (Ciss) of 280 pF at 25V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-252-3, DPAK surface mount configuration, this MOSFET is supplied on a tape and reel. The NVD3055-150T4G meets AEC-Q101 qualification standards, making it suitable for the automotive industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
| Qualification | AEC-Q101 |
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