NVD3055-094T4G
MOSFET N-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVD3055-094T4G is a N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 12A at 25°C. With a maximum Rds(On) of 94mOhm at 6A and 10V, it offers efficient power handling. The device supports a gate drive voltage up to 10V and has a maximum gate charge of 20 nC at 10V. Power dissipation is rated at 1.5W (Ta) and 48W (Tj). This MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. Qualified to AEC-Q101 standards, it is ideal for automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 48W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
| Qualification | AEC-Q101 |
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