NVD20N03L27T4G
MOSFET N-CH 30V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVD20N03L27T4G is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C ambient. The NVD20N03L27T4G offers a low on-resistance of 27mOhm at 10A and 5V gate-source drive voltage, ensuring efficient power transfer. It is packaged in a TO-252-3 DPAK surface-mount configuration, ideal for compact board designs. Key electrical characteristics include a gate charge of 18.9 nC (max) at 10V and input capacitance of 1260 pF (max) at 25V. With a maximum power dissipation of 1.75W (ambient) and 74W (case), and qualified to AEC-Q101 standards, this MOSFET is suitable for power management and switching circuits within the automotive sector.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
| Qualification | AEC-Q101 |
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