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NVC6S5A444NLZT2G

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NVC6S5A444NLZT2G

MOSFET N-CH 60V 3.5A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVC6S5A444NLZT2G is an N-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3.5A at 25°C. With a maximum Rds(on) of 78mOhm at 2A and 10V Vgs, it offers efficient switching characteristics. The NVC6S5A444NLZT2G is housed in a compact 6-CPH (SOT-23-6 Thin) surface mount package, dissipating up to 970mW at 25°C. Key parameters include a Gate Charge (Qg) of 10nC at 10V and an input capacitance (Ciss) of 505pF at 20V. This component meets AEC-Q101 qualification, making it suitable for automotive applications, as well as general-purpose power management and switching circuits in industrial and consumer electronics. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs78mOhm @ 2A, 10V
FET Feature-
Power Dissipation (Max)970mW (Ta)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device Package6-CPH
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds505 pF @ 20 V
QualificationAEC-Q101

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