NVC6S5A354PLZT1G
MOSFET P-CH 60V 4A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVC6S5A354PLZT1G is a P-Channel MOSFET designed for demanding applications. This component features a 60 V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. With a maximum Rds(on) of 100mOhm at 2A and 10V, it offers efficient power switching. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 1.9W. Key parameters include a gate charge (Qg) of 14 nC at 10 V and an input capacitance (Ciss) of 600 pF at 20 V. The NVC6S5A354PLZT1G utilizes MOSFET technology and is provided in a 6-CPH (SOT-23-6 Thin, TSOT-23-6) surface mount package, supplied on tape and reel. It meets AEC-Q101 qualification standards, making it suitable for automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-CPH |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 20 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
