NVC3S5A51PLZT1G
MOSFET P-CH 60V 1.8A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVC3S5A51PLZT1G is a P-Channel MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 60V drain-source voltage and a continuous drain current of 1.8A at 25°C. The device offers a maximum on-resistance of 250mOhm at 1A and 10V Vgs, with a gate threshold voltage of 2.6V at 1mA. Key parameters include a gate charge of 6 nC at 10V and an input capacitance of 262 pF at 20V. The NVC3S5A51PLZT1G is housed in a 3-CPH (SC-59, SOT-23-3) surface mount package, supporting a maximum power dissipation of 1.2W. Operating temperature ranges from -55°C to 175°C (TJ) with a maximum gate-source voltage of ±20V. This MOSFET is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 20 V |
| Qualification | AEC-Q101 |
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