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NVBLS0D7N06C

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NVBLS0D7N06C

MOSFET N-CH 60V 54A/470A 8HPSOF

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVBLS0D7N06C is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and offers a continuous drain current capability of 54A at ambient temperature (Ta) and 470A at case temperature (Tc). With a low on-resistance of 0.75mOhm at 80A and 10V gate drive, it minimizes conduction losses. The device supports a gate drive voltage up to 10V for optimal performance and has a maximum gate charge of 170 nC at 10V. The NVBLS0D7N06C dissipates a maximum of 4.2W (Ta) or 314W (Tc) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is supplied in an 8-HPSOF package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id4V @ 661µA
Supplier Device Package8-HPSOF
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13730 pF @ 30 V
QualificationAEC-Q101

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