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NVBLS0D7N04M8TXG

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NVBLS0D7N04M8TXG

MOSFET N-CH 40V 240A 8HPSOF

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVBLS0D7N04M8TXG is a 40V N-Channel MOSFET designed for high-power applications. This AEC-Q101 qualified component features a low on-resistance of 0.75mOhm at 80A and 10V Vgs, enabling efficient power transfer. With a continuous drain current capability of 240A (Tc) and a maximum power dissipation of 357W (Tj), it is well-suited for demanding automotive and industrial power management systems. The device utilizes advanced MOSFET technology, offering a gate charge of 188 nC at 10V. Packaged in an 8-HPSOF (8-PowerSFN) format for efficient thermal management and surface mounting, the NVBLS0D7N04M8TXG operates across a temperature range of -55°C to 175°C (TJ). Its robust construction and high performance characteristics make it a reliable choice for power conversion and control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)357W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-HPSOF
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 25 V
QualificationAEC-Q101

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