NVBGS6D5N15MC
MOSFET N-CH 150V 15/121A D2PAK-7Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVBGS6D5N15MC is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 15A at ambient temperature, scaling to 121A at case temperature. With a low on-resistance (Rds On) of 7mOhm at 69A and 10V, it offers efficient power handling with a maximum power dissipation of 3.7W (Ta) and 238W (Tc). The NVBGS6D5N15MC utilizes advanced MOSFET technology and is packaged in a TO-263-7 (D2PAK) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 57nC at 10V and input capacitance (Ciss) of 4745pF at 75V. Qualified to AEC-Q101 standards and rated for automotive applications, this component is suitable for use in power management, automotive systems, and industrial power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 121A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 238W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 379µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4745 pF @ 75 V |
| Qualification | AEC-Q101 |
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