NVBGS4D1N15MC
MOSFET N-CH 150V 20A/185A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVBGS4D1N15MC is a high-performance N-Channel Power MOSFET designed for demanding automotive applications. This device features a drain-source breakdown voltage (Vdss) of 150 V and offers continuous drain current capabilities of 20A at ambient temperature (Ta) and 185A at case temperature (Tc). Its low on-resistance (Rds On) of 4.1mOhm at 104A and 10V Vgs, coupled with a maximum gate charge (Qg) of 88.9 nC at 10V, ensures efficient switching. The MOSFET is housed in a TO-263-7 (D2PAK) package, suitable for surface mounting, and supports a wide operating temperature range of -55°C to 175°C. With a maximum power dissipation of 3.7W (Ta) and 316W (Tc), this AEC-Q101 qualified component is ideal for power management solutions in the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 316W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 574µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 88.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7285 pF @ 75 V |
| Qualification | AEC-Q101 |
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