NVBGS1D2N08H
T8-80V IN SUZHOU D2PAK7L FOR AUTManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVBGS1D2N08H is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 43A at ambient temperature, and 290A at case temperature. With a maximum Rds(on) of 1.34mOhm at 50A and 10V drive voltage, it offers low conduction losses. The device has a maximum power dissipation of 5.7W at ambient and 259W at case temperature, packaged in a surface mount D2PAK-7 (TO-263-7) for efficient thermal management. Key parameters include a Gate Charge (Qg) of 160 nC and Input Capacitance (Ciss) of 10830 pF at 40V. Qualified to AEC-Q101 and operating from -55°C to 175°C, this MOSFET is suitable for power conversion and motor control systems within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 290A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.34mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.7W (Ta), 259W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 650µA |
| Supplier Device Package | D2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10830 pF @ 40 V |
| Qualification | AEC-Q101 |
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