NVBG040N120M3S
SILICON CARBIDE (SIC) MOSFET-ELIManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 57A (Tc) 263W (Tc) Surface Mount D2PAK-7
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| Qualification | AEC-Q101 |
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