NVB6413ANT4G
MOSFET N-CH 100V 42A D2PAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVB6413ANT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C (Tc). The low on-resistance (Rds On) of 28mOhm at 42A and 10V gate drive voltage, combined with a maximum power dissipation of 136W (Tc), makes it suitable for high-efficiency power conversion. Key parameters include input capacitance (Ciss) of 1800pF at 25V and gate charge (Qg) of 51nC at 10V. Qualified to AEC-Q101 standards and rated for automotive grade applications, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). It is supplied in a TO-263-3, D2PAK package, suitable for surface mounting and available on tape and reel. This component is utilized in automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Qualification | AEC-Q101 |
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