NVB6410ANT4G
MOSFET N-CH 100V 76A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVB6410ANT4G is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This device offers a continuous drain current (Id) of 76A at 25°C (Tc) and a maximum power dissipation of 188W (Tc). The on-resistance (Rds On) is specified at a maximum of 13mOhm at 76A and 10V gate drive. Key parameters include a gate charge (Qg) of 120nC at 10V and input capacitance (Ciss) of 4500pF at 25V. It features a low thermal resistance and is designed for surface mounting in a TO-263-3, D2PAK package. Qualified to AEC-Q101 automotive standards, this MOSFET is suitable for demanding applications in the automotive sector. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
| Qualification | AEC-Q101 |
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