NVB60N06T4G
MOSFET N-CH 60V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVB60N06T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 60 A at 25°C. The NVB60N06T4G offers a low on-resistance of 14 mOhm at 30 A and 10 V, with a gate charge of 81 nC at 10 V. Power dissipation capabilities are 2.4 W (Ta) and 150 W (Tj). The device is supplied in a TO-263-3, D2PAK surface mount package. It is qualified to AEC-Q101, making it suitable for automotive applications. Key parameters include an input capacitance (Ciss) of 3220 pF at 25 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
| Qualification | AEC-Q101 |
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