NVB5860NT4G
MOSFET N-CH 60V 220A D2PAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVB5860NT4G is a 60V N-Channel power MOSFET designed for demanding applications. Featuring a low on-resistance of 3mOhm at 75A and 10V, this device offers efficient power switching. Its high continuous drain current capability of 220A (Tc) and maximum power dissipation of 283W (Tc) make it suitable for high-power automotive and industrial systems. The NVB5860NT4G utilizes Surface Mount technology in a D2PAK-3 (TO-263-3) package, facilitating automated assembly. Key parameters include a gate charge of 180 nC at 10V and an input capacitance of 10760 pF at 25V. This component is qualified to AEC-Q101 standards, ensuring reliability in automotive environments. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 283W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10760 pF @ 25 V |
| Qualification | AEC-Q101 |
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