NVB5860NLT4G
MOSFET N-CH 60V 220A D2PAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVB5860NLT4G is a 60V N-Channel Power MOSFET, qualified to AEC-Q101 standards for automotive applications. This component features a low Rds(on) of 3mOhm at 20A and 10V Vgs, with a continuous drain current capability of 220A (Ta) and a maximum power dissipation of 283W (Tc). Its design supports a gate drive range of 4.5V to 10V, with a maximum gate-source voltage of ±20V. The NVB5860NLT4G utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK package for surface mounting. Key parameters include a gate charge of 220 nC @ 10 V and input capacitance of 13216 pF @ 25 V, operating across a junction temperature range of -55°C to 175°C. This device is commonly employed in automotive power management and high-current switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 283W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13216 pF @ 25 V |
| Qualification | AEC-Q101 |
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