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NVB5426NT4G

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NVB5426NT4G

MOSFET N-CH 60V 120A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVB5426NT4G is a 60V N-Channel Power MOSFET designed for demanding applications. This component features a low on-resistance of 6mOhm at 60A and 10V Vgs, ensuring efficient power transfer. With a continuous drain current rating of 120A (Tc) and a maximum power dissipation of 215W (Tc), it is suitable for high-power switching and motor control. The NVB5426NT4G utilizes Metal Oxide technology and offers a gate charge (Qg) of 170 nC at 10V for optimized switching performance. Its D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package facilitates integration into compact designs. Qualified to AEC-Q101 and featuring an automotive grade, this MOSFET is ideal for automotive and industrial power systems. The operating temperature range is -55°C to 175°C (TJ) and it supports a Vgs of ±20V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)215W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5800 pF @ 25 V
QualificationAEC-Q101

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