NVB25P06T4G
MOSFET P-CH 60V 27.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVB25P06T4G is a P-Channel MOSFET designed for demanding applications. This device features a 60V Drain-to-Source Voltage (Vdss) and supports a continuous drain current of 27.5A at 25°C (Ta). With a maximum power dissipation of 120W (Tj), it is built to handle significant thermal loads. The Rds On is specified at a maximum of 82mOhm when subjected to 25A and a 10V gate-source voltage. Key characteristics include a gate charge of 50 nC at 10V and an input capacitance of 1680 pF at 25V. The NVB25P06T4G utilizes MOSFET technology and is supplied in a TO-263-3, D2PAK package for surface mounting. This component is AEC-Q101 qualified and suitable for the automotive industry. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |
| Qualification | AEC-Q101 |
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