NVATS5A304PLZT4G
MOSFET P-CHANNEL 60V 120A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVATS5A304PLZT4G is a P-Channel MOSFET designed for demanding applications. Featuring a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Ta), this device offers robust performance. The low on-resistance of 6.5mOhm maximum at 50A and 10V gate-source voltage (Vgs) ensures efficient power handling, with a maximum power dissipation of 108W (Tc).
This automotive-grade MOSFET utilizes advanced MOSFET technology and is housed in an ATPAK (TO-252-3, DPAK) surface mount package, supplied in tape and reel. Key parameters include a gate charge (Qg) of 250 nC maximum at 10V Vgs and input capacitance (Ciss) of 13000 pF maximum at 20V Vds. The operating temperature range is -55°C to 175°C (TJ), and it meets AEC-Q101 qualification standards. This component is suitable for power management and switching applications in the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 108W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 20 V |
| Qualification | AEC-Q101 |
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