NVATS5A302PLZT4G
MOSFET P-CHANNEL 60V 80A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVATS5A302PLZT4G is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 60 V. This device is rated for a continuous drain current (Id) of 80 A at 25°C (Ta) and offers a maximum power dissipation of 84 W (Tc). The Rds On (Max) is 13 mOhm at 35 A and 10 V, with drive voltages ranging from 4.5 V to 10 V. It features a gate charge (Qg) of 115 nC at 10 V and input capacitance (Ciss) of 5400 pF at 20 V. Mounting is surface mount, utilizing the ATPAK package (also known as TO-252-3, DPAK). This component is AEC-Q101 qualified, indicating suitability for automotive applications. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 20 V |
| Qualification | AEC-Q101 |
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