NVATS5A114PLZT4G
MOSFET P-CHANNEL 60V 60A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVATS5A114PLZT4G is a P-Channel, 60V MOSFET designed for demanding applications. This device features a low on-resistance of 16mOhm at 28A and 10V Vgs, ensuring efficient power transfer. With a continuous drain current capability of 60A (Ta) and a maximum power dissipation of 72W (Tc), it is suitable for high-current switching scenarios. The NVATS5A114PLZT4G is housed in an ATPAK (TO-252-3, DPAK) surface mount package, facilitating compact board designs. Its AEC-Q101 qualification and automotive grade underscore its reliability in harsh environments. Key parameters include a gate charge of 92 nC at 10V, input capacitance of 4000 pF at 20V Vds, and a Vgs(th) of 2.6V at 1mA. This component is engineered for automotive power management and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 20 V |
| Qualification | AEC-Q101 |
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