NVATS5A112PLZT4G
MOSFET P-CH 60V 27A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVATS5A112PLZT4G is a P-Channel Power MOSFET designed for demanding automotive applications. This surface mount component features a 60V drain-source voltage rating and a continuous drain current capability of 27A at 25°C ambient. With a maximum on-resistance of 43mOhm at 13A and 10V gate-source drive, it offers efficient power handling. The device dissipates up to 48W at the case temperature and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge of 33.5 nC at 10V and input capacitance of 1450 pF at 20V. The NVATS5A112PLZT4G is qualified to AEC-Q101 standards and is supplied in a TO-252-3, DPAK/ATPAK package, presented in tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | DPAK/ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 20 V |
| Qualification | AEC-Q101 |
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