NVATS5A108PLZT4G
MOSFET P-CHANNEL 40V 77A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVATS5A108PLZT4G is a P-Channel MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 77A at 25°C (Ta). With a maximum power dissipation of 72W (Tc) and a low on-resistance (Rds On) of 10.4mOhm at 35A and 10V, it is suitable for high-power switching. The device operates within a temperature range of -55°C to 175°C and is qualified to AEC-Q101 standards, making it ideal for automotive and industrial power management systems. It is supplied in a Surface Mount ATPAK package, presented on Tape & Reel (TR). Key electrical characteristics include a gate charge (Qg) of 79.5 nC at 10V and input capacitance (Ciss) of 3850 pF at 20V. The drive voltage range for optimal performance is between 4.5V and 10V, with a maximum gate-to-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 79.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 20 V |
| Qualification | AEC-Q101 |
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