NVATS4A103PZT4G
MOSFET P-CHANNEL 30V 60A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVATS4A103PZT4G is a P-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C ambient temperature. The NVATS4A103PZT4G offers a low on-resistance (Rds On) of 13mOhm at 28A and 10V gate-source voltage. With a maximum gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 2430 pF at 10V, it is optimized for efficient switching. The device supports a drain-to-source breakdown voltage (Vdss) of 30V and a maximum gate-source voltage (Vgs) of ±20V. It is qualified to AEC-Q101 standards, indicating suitability for automotive applications, and operates across a temperature range of -55°C to 175°C. The NVATS4A103PZT4G is supplied in an ATPAK package, a surface mount configuration, and is available on tape and reel. Its power dissipation is rated at 60W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 10 V |
| Qualification | AEC-Q101 |
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