NVATS4A101PZT4G
MOSFET P-CHANNEL 30V 27A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVATS4A101PZT4G is a P-Channel MOSFET designed for demanding applications. Featuring a 30V drain-source voltage and a continuous drain current of 27A (Ta) at 25°C, this component offers 36W of power dissipation (Tc). The NVATS4A101PZT4G utilizes MOSFET technology and is housed in an ATPAK package, suitable for surface mount installations. Key electrical specifications include a maximum Rds On of 30mOhm at 13A and 10V, an input capacitance of 875pF (Max) at 10V, and a gate charge of 18.5 nC at 10V. It supports gate-source voltages up to ±20V and has a threshold voltage of 2.6V (Max) at 1mA. This device is AEC-Q101 qualified and designed for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | ATPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 10 V |
| Qualification | AEC-Q101 |
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