NTZS3151PT5G
MOSFET P-CH 20V 860MA SOT563Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTZS3151PT5G is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 860mA at 25°C (Ta). The Rds On is specified at a maximum of 150mOhm when drawing 950mA with a 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 5.6 nC at 4.5V and an Input Capacitance (Ciss) of 458 pF at 16V. The MOSFET is housed in a compact SOT-563 surface mount package, with a power dissipation of 170mW (Ta). Operating temperatures range from -55°C to 150°C. The NTZS3151PT5G is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 170mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 16 V |
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